Kyoto Semiconductor’s newly developed high-speed photodiode transmission speed can reach 400Gbps
Recently, Japan’s Kyoto semiconductor Company has developed a high-speed photodiode KP-H KPDEH12L-CC1C, which can be used to support a PAM4-based 400Gbps transmission system within and between data centers.
During the research and development process, the researchers bundled four 25Gbps lines together to achieve a transmission speed of 100Gbps. However, the demand for transmission speeds of 400Gps to 800Gbps in the market is constantly increasing.
With the introduction of InGaAs photodiodes, Kyoto Semiconductor will continue to support the ever-increasing speed and capacity requirements of 5G or higher transmission systems.
The main features of KP-H KPDEH12L-CC1C include:
-high speed. With the help of electromagnetic simulation software, the researchers optimized the size, width and length of the high-frequency electrode on the carrier so that it can correspond to a 40GHz bandwidth when used with a commercially available transimpedance amplifier.
—Easy to install and use. The carrier for installing KPDEH12L-CC1C has been specially optimized to achieve high frequency. A condensing lens is integrated on the back of the photodiode, so that the incident light can be collected in the light absorption area, and the alignment of the optical fiber and the PD is easier.
KP-H photodiodes have passed the verification of Telcordia GR-468-Core, a standard reliability test for communication equipment.
The Links: EPM1270F256I5 2DI200-100 BUYPART